2N2608
| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 200°C |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power - Max | 300mW |
| FET Type | P-Channel |
| Transistor Application | AMPLIFIER |
| FET Technology | JUNCTION |
| Current - Drain (Idss) @ Vds (Vgs=0) | 900μA @ 5V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Vendor Undefined |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW NOISE |
| Subcategory | FET General Purpose Small Signal |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
See Relate Datesheet
