2N2857
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Power Dissipation | 200mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Frequency | 1.6GHz |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 40mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA 1V |
| Collector Emitter Breakdown Voltage | 15V |
| Gain | 12.5dB ~ 21dB @ 450MHz |
| Transition Frequency | 1600MHz |
| Frequency - Transition | 500MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 3V |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
