Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | TO39-P008B |
Operating Temperature | 175°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Max Power Dissipation | 600mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Current Rating | -600mA |
Frequency | 200MHz |
Base Part Number | 2N29 |
Pin Count | 3 |
Reference Standard | CECC |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 600mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 200MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | -60V |
Max Collector Current | -600mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
Current - Collector Cutoff (Max) | 10nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | -60V |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 600mA |
Transition Frequency | 200MHz |
Collector Emitter Saturation Voltage | -1.6V |
Collector Base Voltage (VCBO) | -60V |
Emitter Base Voltage (VEBO) | -5V |
hFE Min | 50 |
Max Junction Temperature (Tj) | 175°C |
Turn On Time-Max (ton) | 45ns |
Collector-Base Capacitance-Max | 8pF |
Diameter | 9.4mm |
Height | 6.6mm |
Length | 9.4mm |
Width | 9.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |