Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Surface Mount | NO |
Number of Pins | 2 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Tray |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 60V |
Max Power Dissipation | 115W |
Terminal Position | BOTTOM |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 15A |
Frequency | 2.5MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | 2N3055 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 115W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 2.5MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 15A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
Current - Collector Cutoff (Max) | 700μA |
Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 2.5MHz |
Collector Emitter Saturation Voltage | 3V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 20 |
Max Junction Temperature (Tj) | 200°C |
Height | 8.51mm |
Length | 39.37mm |
Width | 26.67mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |