Parameters | |
---|---|
Qualification Status | Not Qualified |
Operating Temperature (Max) | 200°C |
Operating Temperature (Min) | -65°C |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 40MHz |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 500nA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 40MHz |
Frequency - Transition | 40MHz |
Collector Base Voltage (VCBO) | 125V |
Power Dissipation-Max (Abs) | 1W |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 40 |
DC Current Gain-Min (hFE) | 15 |
Turn Off Time-Max (toff) | 1200ns |
Turn On Time-Max (ton) | 300ns |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Package / Case | TO-39 |
Transistor Element Material | SILICON |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Number of Terminations | 3 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | O-MBCY-W3 |