2N3663
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| HTS Code | 8541.21.00.75 |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 350mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA 10V |
| Gain | 1.5dB |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 50mA |
| Transition Frequency | 700MHz |
| Frequency - Transition | 2.1GHz |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1.7pF |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
