2N3859A
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Reach Compliance Code | unknown |
| Current Rating | 500A |
| Frequency | 250MHz |
| Base Part Number | 2N3859 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA 1V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 90MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Collector-Base Capacitance-Max | 4pF |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
