Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2005 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN/TIN COPPER |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 40V |
Max Power Dissipation | 300mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 200mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | 2N3904 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power - Max | 625mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 300MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 40V |
Max Collector Current | 200mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
Current - Collector Cutoff (Max) | 50nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
Collector Emitter Breakdown Voltage | 40V |
Transition Frequency | 300MHz |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 40 |
Turn Off Time-Max (toff) | 250ns |
Turn On Time-Max (ton) | 70ns |
Collector-Base Capacitance-Max | 4pF |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |