Parameters | |
---|---|
Base Part Number | 2N3906 |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 250MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 400mV |
Max Collector Current | 200mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
Collector Emitter Breakdown Voltage | 40V |
Transition Frequency | 250MHz |
Collector Emitter Saturation Voltage | 400mV |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 60 |
Turn Off Time-Max (toff) | 300ns |
Turn On Time-Max (ton) | 70ns |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2008 |
JESD-609 Code | e1 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | EUROPEAN PART NUMBER |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 40V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 200mA |
Time@Peak Reflow Temperature-Max (s) | 40 |