Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Package / Case | TO-18 |
Transistor Element Material | SILICON |
Packaging | Bulk |
Published | 2004 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | LOW NOISE |
Subcategory | Other Transistors |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | O-MBCY-W3 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 175°C |
Number of Elements | 1 |
Polarity | PNP |
Power Dissipation-Max | 360mW |
Element Configuration | Single |
Gain Bandwidth Product | 40MHz |
Collector Emitter Voltage (VCEO) | 400mV |
Max Collector Current | 200mA |
Collector Emitter Breakdown Voltage | 45V |
Transition Frequency | 40MHz |
Collector Emitter Saturation Voltage | 250mV |
Frequency - Transition | 50MHz |
Collector Base Voltage (VCBO) | 45V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 250 |
DC Current Gain-Min (hFE) | 250 |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |