Parameters | |
---|---|
Voltage - Breakdown (V(BR)GSS) | 40V |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 300mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Pin Count | 8 |
JESD-30 Code | O-MBCY-W4 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 300mW |
FET Type | N-Channel |
Transistor Application | AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
Breakdown Voltage | -70V |
Gate to Source Voltage (Vgs) | -40V |
FET Technology | JUNCTION |
Feedback Cap-Max (Crss) | 1.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 30μA @ 10V |
Voltage - Cutoff (VGS off) @ Id | 600mV @ 1nA |