2N4118A-E3
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 8 |
| JESD-30 Code | O-MBCY-W4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 300mW |
| FET Type | N-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
| Breakdown Voltage | -70V |
| Gate to Source Voltage (Vgs) | -40V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 1.5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 80μA @ 10V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
