2N4124-AP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625MW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 300MHz |
| Frequency - Transition | 300MHz |
| Power Dissipation-Max (Abs) | 1.5W |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
