Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Bulk |
Published | 2002 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW INSERTION LOSS |
Subcategory | Other Transistors |
Max Power Dissipation | 1.8W |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 50mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 1.8W |
Case Connection | GATE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V |
Breakdown Voltage | -55V |
Drain to Source Voltage (Vdss) | 400mV |
Continuous Drain Current (ID) | 25mA |
Gate to Source Voltage (Vgs) | -40V |
FET Technology | JUNCTION |
Drain to Source Resistance | 60Ohm |
Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 20V |
Voltage - Cutoff (VGS off) @ Id | 2V @ 1nA |
Voltage - Breakdown (V(BR)GSS) | 40V |
Resistance - RDS(On) | 60Ohm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |