2N4403-AP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2N4403 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 600mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Transition Frequency | 200MHz |
| Frequency - Transition | 200MHz |
| Power Dissipation-Max (Abs) | 0.6W |
| Turn Off Time-Max (toff) | 255ns |
| Turn On Time-Max (ton) | 35ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
