Parameters | |
---|---|
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -50°C~150°C TJ |
Packaging | Bulk |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Subcategory | Other Transistors |
Max Power Dissipation | 300mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Pin Count | 8 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 300mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 15V |
Breakdown Voltage | -36V |
Drain to Source Voltage (Vdss) | 10V |
Gate to Source Voltage (Vgs) | -35V |
FET Technology | JUNCTION |
Drain to Source Resistance | 150Ohm |
Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 2.5V @ 1nA |
Voltage - Breakdown (V(BR)GSS) | 35V |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |