2N4871
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~125°C TJ |
| Packaging | Bulk |
| Published | 2013 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Unijunction Transistors |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 300mW |
| Transistor Application | SWITCHING |
| Transistor Type | PNP |
| Power Dissipation-Max (Abs) | 0.3W |
| Inter-base Voltage-Max | 35V |
| Intrinsic Stand-off Ratio-Max | 0.85 |
| Intrinsic Stand-off Ratio-Min | 0.7 |
| Static Inter-base Res-Max | 9.1 kΩ |
| Static Inter-base Res-Min | 4 kΩ |
| Valley Point Current-Min | 4mA |
| Emitter Current-Max | 50mA |
| Peak Point Current-Max | 5mA |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
