Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Bulk |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Other Transistors |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | O-MBCY-W4 |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 200mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA 1V |
Gain | 15dB |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Current - Collector (Ic) (Max) | 50mA |
Transition Frequency | 900MHz |
Frequency - Transition | 2GHz |
Power Dissipation-Max (Abs) | 0.3W |
VCEsat-Max | 0.4 V |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 1pF |
Noise Figure (dB Typ @ f) | 4.5dB @ 200MHz |
RoHS Status | ROHS3 Compliant |