2N5210
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Package / Case | TO-92 |
| Transistor Element Material | SILICON |
| Packaging | Bulk |
| Published | 2012 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation-Max | 350mW |
| Element Configuration | Single |
| Gain Bandwidth Product | 30MHz |
| Collector Emitter Voltage (VCEO) | 700mV |
| Max Collector Current | 50mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 700mV |
| Frequency - Transition | 30MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 200 |
| DC Current Gain-Min (hFE) | 200 |
| Continuous Collector Current | 100mA |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
