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2N5401RL1G

2N5401RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N5401RL1G
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 500
  • Description: 2N5401RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating -600mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5401
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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