2N5457
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 310mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-PBCY-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 310mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Continuous Drain Current (ID) | 10mA |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 3 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 10nA |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
