Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 201mg |
Transistor Element Material | SILICON |
Operating Temperature | 135°C TJ |
Packaging | Bulk |
Published | 2006 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | LOW NOISE |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 10mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | 2N5458 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 625mW |
Power - Max | 310mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
Breakdown Voltage | 25V |
Continuous Drain Current (ID) | 9mA |
Gate to Source Voltage (Vgs) | 3.5V |
Drain to Source Breakdown Voltage | 25V |
FET Technology | JUNCTION |
Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 1V @ 10nA |
REACH SVHC | No SVHC |
RoHS Status | Non-RoHS Compliant |
Lead Free | Lead Free |