2N5460
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Position | BOTTOM |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | O-PBCY-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 310mW |
| FET Type | P-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Continuous Drain Current (ID) | 5mA |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 2 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 750mV @ 1μA |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
