2N5460G
| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 8 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~135°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.21.00.95 |
| Subcategory | FET General Purpose Small Signal |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 350mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 10mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N5460 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 200mW |
| Power - Max | 350mW |
| FET Type | P-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Gate to Source Voltage (Vgs) | 40V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 2 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 750mV @ 1μA |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
