Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
Contact Plating | Copper, Silver, Tin |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | EUROPEAN PART NUMBER |
Subcategory | Other Transistors |
Voltage - Rated DC | 160V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 600mA |
Frequency | 300MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | 2N5551 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 625mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 300MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 160V |
Max Collector Current | 600mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V |
Current - Collector Cutoff (Max) | 50nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Collector Emitter Breakdown Voltage | 160V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 250mV |
Max Breakdown Voltage | 160V |
Collector Base Voltage (VCBO) | 180V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 80 |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |