2N5551RLRM
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Current - Collector (Ic) (Max) | 600mA |
| Transition Frequency | 100MHz |
| Frequency - Transition | 300MHz |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
