Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V VGS |
Drain to Source Voltage (Vdss) | 30V |
Drain-source On Resistance-Max | 30Ohm |
DS Breakdown Voltage-Min | 30V |
FET Technology | JUNCTION |
Feedback Cap-Max (Crss) | 4 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 50mA @ 20V |
Voltage - Breakdown (V(BR)GSS) | 35V |
Resistance - RDS(On) | 30Ohm |
RoHS Status | Non-RoHS Compliant |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN LEAD |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power - Max | 310mW |