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2N5657G

2N5657G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N5657G
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 502
  • Description: 2N5657G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) 260
Current Rating 3.7A
Frequency 10MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5657
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 10MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 375V
Emitter Base Voltage (VEBO) 6V
hFE Min 30
Height 6.35mm
Length 31.75mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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