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2N5830

2N5830 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N5830
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 178
  • Description: 2N5830 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Max Power Dissipation 625mW
Current Rating 200mA
Base Part Number 2N5830
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 200mA
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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