2N5876
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Package / Case | TO-3 |
| Transistor Element Material | SILICON |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Max Power Dissipation | 150W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 150W |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| DC Current Gain-Min (hFE) | 20 |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
