Parameters | |
---|---|
Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
Collector Emitter Breakdown Voltage | 80V |
Current - Collector (Ic) (Max) | 25A |
Max Frequency | 4MHz |
Transition Frequency | 4MHz |
Collector Emitter Saturation Voltage | 1V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 35 |
Height | 8.51mm |
Length | 39.37mm |
Width | 26.67mm |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Number of Pins | 2 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Tray |
Published | 2006 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 200W |
Terminal Position | BOTTOM |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -25A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | 2N5884 |
Pin Count | 2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 200W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 4MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 4V |
Max Collector Current | 25A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A 4V |
Current - Collector Cutoff (Max) | 2mA |