2N5953
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Vendor Undefined |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power - Max | 360mW |
| FET Type | N-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 15V |
| Drain Current-Max (Abs) (ID) | 0.005A |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | JUNCTION |
| Power Dissipation-Max (Abs) | 0.36W |
| Feedback Cap-Max (Crss) | 2 pF |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 800mV @ 100nA |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Resistance - RDS(On) | 375Ohm |
| Power Gain-Min (Gp) | 5dB |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
