Parameters | |
---|---|
Power Dissipation-Max (Abs) | 75W |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tube |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Other Transistors |
Terminal Position | SINGLE |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Power - Max | 75W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | PNP |
Transistor Type | PNP - Darlington |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A 4V |
Current - Collector Cutoff (Max) | 20μA |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 8A |
Transition Frequency | 4MHz |
Frequency - Transition | 4MHz |