2N6052G
| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 12A |
| Height | 8.51mm |
| Length | 39.37mm |
| Width | 26.67mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 150W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -12A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N6052 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 12A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A 3V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 2V |
See Relate Datesheet
