2N6059
| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Tube |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | BUILT-IN BIAS RESISTORS |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2N60 |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Case Connection | COLLECTOR |
| Power - Max | 150W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN - Darlington |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A 3V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 12A |
| Transition Frequency | 4MHz |
| Frequency - Transition | 4MHz |
| Power Dissipation-Max (Abs) | 150W |
| VCEsat-Max | 3 V |
| Power Dissipation Ambient-Max | 150W |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
