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2N6111G

2N6111G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N6111G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 904
  • Description: 2N6111G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating -7A
Frequency 10MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6111
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 3A 4V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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