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2N6426RLRA

2N6426RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N6426RLRA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 625
  • Description: 2N6426RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Transition Frequency 125MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 500mA
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6426
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
See Relate Datesheet

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