2N6427
| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Current Rating | 1.2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2N6427 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500μA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 1.2V |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10000 |
| Continuous Collector Current | 500mA |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
