Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | NOT SPECIFIED |
Terminal Position | BOTTOM |
Reach Compliance Code | unknown |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 625mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100μA 5V |
Current - Collector Cutoff (Max) | 25nA |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 200mA |
Transition Frequency | 100MHz |
Frequency - Transition | 700MHz |
RoHS Status | ROHS3 Compliant |