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2N6491

2N6491 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N6491
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 350
  • Description: 2N6491 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Power - Max 1.8W
Gain Bandwidth Product 5MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 15A
Collector Emitter Saturation Voltage 3.5V
Frequency - Transition 5MHz
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -80V
Max Power Dissipation 1.8W
Current Rating 15A
Base Part Number 2N6491
Polarity PNP
Element Configuration Single
Power Dissipation 1.8W
See Relate Datesheet

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