2N6609
| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Package / Case | TO-3 |
| Transistor Element Material | SILICON |
| Published | 2017 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 200°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation-Max | 150W |
| Polarity/Channel Type | PNP |
| Collector Emitter Voltage (VCEO) | 1.4V |
| Max Collector Current | 16A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 4MHz |
| DC Current Gain-Min (hFE) | 15 |
See Relate Datesheet
