2N6668
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 65W |
| Current Rating | -10A |
| Base Part Number | 2N66 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 65W |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 3V |
| Current - Collector Cutoff (Max) | 1mA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 20MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 10A |
| VCEsat-Max | 3 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
