2N6760
| Parameters | |
|---|---|
| DS Breakdown Voltage-Min | 400V |
| RoHS Status | Non-RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 4W Ta 75W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.22 Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 400V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 5.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 22A |
See Relate Datesheet
