2N6798
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AF Metal Can |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD OVER NICKEL |
| HTS Code | 8541.21.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-MBCY-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 800mW Ta 25W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 5.29nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 5.5A |
| Drain-source On Resistance-Max | 0.42Ohm |
| DS Breakdown Voltage-Min | 200V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
