Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Supplier Device Package | TO-92-3 |
Weight | 201mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2011 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 5Ohm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 200mA |
Base Part Number | 2N7000 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 400mW Ta |
Element Configuration | Single |
Power Dissipation | 400mW |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 200mA |
Threshold Voltage | 2.1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Input Capacitance | 40pF |
Drain to Source Resistance | 1.2Ohm |
Rds On Max | 5 Ω |
Nominal Vgs | 2.1 V |
Height | 5.2mm |
Length | 4.8mm |
Width | 4.19mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |