2N7000-G
| Parameters | |
|---|---|
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Number of Channels | 1 |
| Factory Lead Time | 1 Week |
| RoHS Status | ROHS3 Compliant |
| Power Dissipation-Max | 1W Tc |
| Contact Plating | Tin |
| Lead Free | Lead Free |
| Element Configuration | Single |
| Mount | Through Hole |
| Operating Mode | ENHANCEMENT MODE |
| Mounting Type | Through Hole |
| Power Dissipation | 1W |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Turn On Delay Time | 10 ns |
| Number of Pins | 3 |
| FET Type | N-Channel |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Transistor Application | SWITCHING |
| Operating Temperature | -55°C~150°C TJ |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
| Packaging | Bulk |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Published | 2008 |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| JESD-609 Code | e3 |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 200mA Tj |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Number of Terminations | 3 |
| Vgs (Max) | ±30V |
| ECCN Code | EAR99 |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 200mA |
| Additional Feature | HIGH INPUT IMPEDANCE |
| Threshold Voltage | 800mV |
| Subcategory | FET General Purpose Power |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| Voltage - Rated DC | 60V |
| Drain-source On Resistance-Max | 5Ohm |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Breakdown Voltage | 60V |
| Terminal Position | BOTTOM |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 5.334mm |
| Current Rating | 200mA |
| Length | 5.21mm |
| Width | 4.19mm |
| Number of Elements | 1 |
See Relate Datesheet
