Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
Contact Plating | Copper, Silver, Tin |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2007 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 200mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 350mW Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 350mW |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain-source On Resistance-Max | 5Ohm |
Drain to Source Breakdown Voltage | 60V |
Feedback Cap-Max (Crss) | 5 pF |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |