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2N7002BKM,315

2N7002BKM Series N-Channel 60 V 1.6 Ohm 360 mW 0.5nC SMT TrenchMOS FET - SOT-883


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-2N7002BKM,315
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 924
  • Description: 2N7002BKM Series N-Channel 60 V 1.6 Ohm 360 mW 0.5nC SMT TrenchMOS FET - SOT-883 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Number of Elements 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 715mW
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 450mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 0.45A
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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