Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
JESD-609 Code | e3 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 360mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 715mW |
Case Connection | DRAIN |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.6 Ω @ 450mA, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 450mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
Rise Time | 6ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 12 ns |
Continuous Drain Current (ID) | 450mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain Current-Max (Abs) (ID) | 0.45A |
Drain to Source Breakdown Voltage | 60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |