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2N7002K-T1-GE3

VISHAY 2N7002K-T1-GE3 MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 2 V


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-2N7002K-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 992
  • Description: VISHAY 2N7002K-T1-GE3 MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 2 V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2Ohm
Additional Feature LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 350mW Ta
Element Configuration Single
Current 3A
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 190mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2 V
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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